Attenuation characteristics of InP/InGaAsP deep‐ridge waveguide turning mirror
ABSTRACT Attenuation of a deep-ridge waveguide turning mirror is analyzed using a simple overlap integral calculation. According to this analysis, loss of the fabricated mirror was improved by 1.1 dB and uniformity was also improved. Our analysis shows that more reduction of attenuation can be made by using the steep mirror facet through an optimization of the dry etch condition. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 37: 428–431, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10939
- SourceAvailable from: Pei-Kuen Wei
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- "(or etching depth) must be larger than mode size to avoid the interference of mode field by mirror edge, and mirror surface roughness should be less than one tenth of the light wavelength to be optically smooth. The mirror tilt from verticality must be less than 4 in order to have a loss of less than 3 dB . Though the dry-etching methods can produce a vertical sidewall , its surface quality and the etching depth are inadequate. "
ABSTRACT: This paper presents a novel wet etching method for LiNbO<sub>3</sub> using electric-field-assisted proton exchange. By applying voltage with appropriate polarity on designed electrodes placed on both sides of substrate, the induced electric-field distribution can effectively suppress or enhance proton diffusion in the lateral and depth directions. Thus, the proton-exchanged range in LiNbO<sub>3</sub> can be expertly manipulated. Because the proton-exchanged region can be removed by using a mixture of HF/HNO<sub>3</sub> acids, the proposed wet-etching method can effectively control the shape of the etched region in the LiNbO<sub>3</sub> substrate. Under appropriate electrode and proton-exchange parameters, a vertical sidewall with smooth surface is successfully produced, which makes fabricating reflection mirrors and T-junctions in LiNbO<sub>3</sub> possible. By utilizing the proposed wet-etching method, optical integrated circuits with higher integration density can be fabricated in LiNbO<sub>3</sub>.Journal of Lightwave Technology 08/2004; DOI:10.1109/JLT.2004.829229 · 2.86 Impact Factor