Article

Atomic layer deposition of ZrO2 and HfO2 on deep trenched and planar silicon

Microelectronic Engineering (impact factor: 1.56). 84:2010-2013. DOI:10.1016/j.mee.2007.04.035 pp.2010-2013

ABSTRACT Conformal ZrO2 and HfO2 thin films were grown by atomic layer deposition using novel liquid cyclopentadienyl precursors at 300 °C or 350 °C on planar Si wafers and deep trenched Si with an aspect ratio of 60:1. The crystal growth and phase content in as-deposited films depended on the precursor, film thickness, and the material grown. The structural and electrical behaviour of the films were somewhat precursor-dependent, revealing better insulating properties in the films grown from oxygen-containing precursors. Also the HfO2 films showed lower leakage compared to ZrO2.

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