Transport and angular resolved photoemission measurements of the electronic properties of In 2O 3 bulk single crystals
ABSTRACT High quality In 2O 3 single crystals of bcc structure were grown by chemical vapour transport. The temperature dependence of resistivity, Hall constant, and mobility yielded an electron density of n = 1.3 × 10 19*cm -3. The transport properties showed characteristics best describable by the degenerate semiconductor model. The crystals were additionally investigated by high resolution angular resolved photoelectron spectroscopy (ARPES). Emission from the valence band and the partially filled conduction band at the Γ point yielded a direct bandgap of (2.7 ± 0.1)eV. The partially filled conduction band furthermore enabled the determination of its three dimensional Fermi surface and the effective masses m * by ARPES.