Silicon nanotubes from sacrificial silicon nanowires: fabrication and manipulation via embedding in flexible polymers.
ABSTRACT In the present work we report a simple method to fabricate Si nanotubes (NTs) starting from the growth of self-assembled sacrificial Si nanowires that, at the same time, embeds them into a polyimide matrix, allowing a very easy manipulation of these nano-objects, including removal, transfer and positioning. Our all-silicon fabrication method is completely compatible with the Si technology platform and is therefore implementable using the existing technology. Transferred NTs show good electrical contact with underlying electrodes, and relatively low resistance values have been measured. All these features demonstrate the effectiveness of the transfer method and the potentiality of the NTs in electronics. Finally, optical reflectivity of the NTs has been measured in the near UV-near IR spectral range.
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ABSTRACT: A simple and fast technique to grow free standing, open ended germanium nanotubes is demonstrated using template assisted electrodeposition from a room temperature ionic liquid. Germanium nanotubes as long as 2 μm could be grown using this technique. We also show the possibility for the growth of core-shell structures. The technique demonstrated is not limited to the growth of Ge, but can be extended to grow other semiconductor nanotubes and core-shell structures.Electrochimica Acta. 01/2014; 121:154–158.
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ABSTRACT: We studied large-scale fabrication and photovoltaic properties of Si tube array (SiTA) for solar energy harvesting application. The SiTA is fabricated with photolithography by using Poisson spot effect, followed by investigating its light absorption properties and photoelectrochemical performance to compare its solar energy harvesting property with the well studied Si hole and Si pillar array. It was found that SiTA has the highest onset potential and photocurrent among the three Si micro/nanostructures because of its “hole-in-pillar” hierarchal structures. The result suggests an alternative strategy in enhancing the efficiency of Si photovoltaic devices using this hierarchal structure.Applied Physics Letters 04/2013; 102(16). · 3.79 Impact Factor