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A bandwidth adjustable integrated optical receiver with an on-chip silicon avalanche photodetector

Department of Electrical and Electronic Engineering, Yonsei University 134 Shinchon-dong, 120–749, Seoul, Korea; IHP, 15236, Frankfurt (Oder), Germany; Design of Integrated Circuits for Optical Communications, 2002, New York
IEICE Electronics Express Nature Appl. Phys. Lett. Opt. Express IEICE Electron. Express IEEE Trans. Circuits Syst. II 04/2010; 838(46):404-409.

ABSTRACT A bandwidth adjustable integrated optical receiver hav-ing an on-chip silicon avalanche photodetector is realized with stan-dard 0.25-µm silicon-germanium bipolar complementary metal-oxide-semiconductor technology for optical interconnect applications. With the controllable capacitive degeneration technique, the optical receiver bandwidth can be adjusted for the best bit error rate performance.

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