Article

NANOHETEROINTERFACE WAVE FUNCTION PENETRATION LENGTH PHOTONIC CHARACTERISATION

Rev.Adv.Mater.Sci 01/2006; 12:182-188. pp.182-188

ABSTRACT The persistent photoenhancement (PPE) of the mobility of the two-dimensional electron gas (2DEG) dwelling within a typical functional semiconductor nanoheterointerface (NHI) is processed to yield the energetic separation between the fundamental and first excited conduction subband of the NHI quantum well (QW). Upon that, a finite difference method NHI wave function (WF) engineering is employed to determine the crucial optoelectronic parameter of NHI WF penetration length (into the QW energetic barrier layer) tantamount to the 2DEG mobility behavior, a satisfactory agreement with alternatively obtained values for this parameter being reached.

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Keywords

2DEG
 
2DEG mobility behavior
 
crucial optoelectronic parameter
 
finite difference method NHI wave function
 
fundamental
 
NHI WF penetration length
 
persistent photoenhancement
 
QW energetic barrier layer
 
satisfactory agreement
 
two-dimensional electron gas
 
typical functional semiconductor nanoheterointerface
 
WF