High speed silicon Mach-Zehnder modulator based on interleaved PN junctions

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China.
Optics Express (Impact Factor: 3.53). 07/2012; 20(14):15093-9. DOI: 10.1364/OE.20.015093
Source: PubMed

ABSTRACT A high speed silicon Mach-Zehnder modulator is proposed based on interleaved PN junctions. This doping profile enabled both high modulation efficiency of V(π)L(π) = 1.5~2.0 V·cm and low doping-induced loss of ~10 dB/cm by applying a relatively low doping concentration of 2 × 10(17) cm(-3). High speed operation up to 40 Gbit/s with 7.01 dB extinction ratio was experimentally demonstrated with a short phase shifter of only 750 μm.

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