Article

Near-UV Irradiation Effects on Pentacene-Based Organic Thin Film Transistors

IEEE Transactions on Nuclear Science (impact factor: 1.45). 12/2011; 58(6):2911-2917. pp.2911-2917

ABSTRACT We irradiated Organic Thin-Film Transistors using light sources with peak wavelength in the near-UV spectrum. Organic Thin-Film Transistors have been found very sensitive to near UV rays. Irradiation generates negative trapped charge due to photogeneration, as well as neutral defects, which degrade the mobility and transconductance. We observed noticeable degradation even with 400-nm wavelength, which lies between visible and UV-light. Stronger variations were observed with the shortest wavelength, with a transconductance drop of 85% after 33000-s irradiation with 310 nm UV. We found that the mobility degradation is permanent after storing the devices in vacuum at least for 50 days.

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Keywords

light sources
 
mobility degradation
 
near-UV spectrum
 
negative
 
neutral defects
 
noticeable degradation
 
peak wavelength
 
photogeneration
 
storing
 
transconductance
 
transconductance drop
 
UV rays
 
UV-light