Article
A New Method of Carbon‐Nanotube Patterning Using Reduction Potentials
Advanced Materials (impact factor:
13.88).
01/2009;
21(12):1257 - 1260.
DOI:10.1002/adma.200802507
pp.1257 - 1260
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Citations (0)
- Cited In (1)
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Article: Enrichment of Semiconducting Single-Walled Carbon Nanotubes by Carbothermic Reaction for Use in All-Nanotube Field Effect Transistors.
[show abstract] [hide abstract]
ABSTRACT: Selective removal of metallic single-walled carbon nanotubes (SWCNTs) and consequent enrichment of semiconducting SWCNTs were achieved through an efficient carbothermic reaction with a NiO thin film at a relatively low temperature of 350 °C. All-SWCNT field effect transistors (FETs) were fabricated with the aid of a patterned NiO mask, in which the as-grown SWCNTs behaving as source/drain electrodes and the remaining semiconducting SWCNTs that survive in the carbothermic reaction as a channel material. The all-SWCNT FETs demonstrate improved current ON/OFF ratios of ∼10(3).ACS Nano 10/2012; · 10.77 Impact Factor
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