A Novel Self-Ordered Sub-10 nm Nanopore Template for Nanotechnology

CNRS, UMR 7325, 13288, Marseille, France, Aix-Marseille Univ., CINaM, 13288, Marseille, France. .
Advanced Materials (Impact Factor: 17.49). 09/2012; 24(37):5094-8. DOI: 10.1002/adma.201200648
Source: PubMed


The fabrication of cost-efficient wafer scale self-ordered arrays of vertical and insulating sub-10 nm nanopores with low porosity is demonstrated. These meet challenging applications like read heads with perpendicular to the plane giant magnetoresistance, calling for strongly localized currents. Purely electrical sequencing of DNA strands, requiring insulating membranes with reduced pore diameters can also be considered.

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Available from: Margrit Hanbucken, Oct 07, 2015
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    • "The anodic aluminum oxide (AAO) pores have been formed on aluminum foils (99.999 % from Smart Membranes GmbH) through the so-called two-step anodization process [19] in phosphoric acid (1 %) at T= 2 • C and an applied voltage of 195 V. The detailed description of the method has been reported previously [43] [24]. The self-ordered AAO membrane exhibited a pore diameter and a length in the range of 180 nm and 20 m, respectively. "
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    Electrochimica Acta 07/2015; 179:504. DOI:10.1016/j.electacta.2015.07.016 · 4.50 Impact Factor
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    • "Electrochemical production methods have been used to fill nanopores in the template with conducting, semiconducting or bio-molecular materials, in order to fabricate nanostructures and integrate them in circuit components [3]. Porous anodic aluminum oxides (AAO) have been attracting considerable attention in both the scientific and the commercial fields as an indispensable part of nanotechnology [4]. In 1970, O'Sullivan and Wood presented a model to describe self-regulating pore growth [5]. "
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    ABSTRACT: Highly ordered Anodic Aluminum Oxide (AAO) structures produced from aluminum by using an electrochemical anodizing method were developed towards its application for the next generation of micro/nano medical and energy devices. In addition of analyzing the anodizing current profile, the surface morphology was characterized by using Scanning Electron Microscopy (SEM), the crystalline structure by X-Ray Diffraction (XRD) and the mechanical properties by nanoindentation experiments. The anodizing time and applied potential determines the nanopores regularity and their size, although the effect of the potential is more pronounced than the effect of temperature in the transformation from crystalline alumina to amorphous alumina. Optimum pore growth was achieved with an applied potential of 17 V which led to a pore fraction - P(f) - of about 17.5%. The experimental Berkovich nanoindentation method was used to determine the AAO hardness as a function of the indenter depth, during the loading stage, using mechanical response and deformation behaviour of the nanopores structure. From the experimental data of the load- displacement curves, this method allows the calculation of the indenter contact depth at each reloading point, thus leading to the estimation of the material’s hardness. The results reveal that the hardness depends on the processing conditions used for the production of the AAO samples that also strongly influences the organization and pore size uniformity.
    Journal of Nano Research 10/2013; 25:77-89. DOI:10.4028/ · 0.56 Impact Factor
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    ABSTRACT: Patterning of materials at sub-10 nm dimensions is at the forefront of nanotechnology and employs techniques of various complexity, efficiency, areal scale, and cost. Colloid-based patterning is known to be capable of producing individual sub-10 nm objects. However, ordered, large-area nano-arrays, fully integrated into photonic or electronic devices have remained a challenging task. In this work, we extend the practice of colloidal lithography to producing large-area sub-10 nm point-contact arrays and demonstrate their circuit integration into spin-photo-electronic devices. The reported nanofabrication method should have broad application areas in nanotechnology as it allows ballistic-injection devices, even for metallic materials with relatively short characteristic relaxation lengths.
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