Growth mechanism of scales of SiC nanowires with/without ZnS powders at varying temperatures

Applied Physics A (Impact Factor: 1.69). 02/2009; 94(3):613-618. DOI: 10.1007/s00339-008-4868-5

ABSTRACT The growth mechanism of scales of crystalline SiC nanowires (SiC-NWs) obtained by directly evaporating solid carbon on silicon
wafer with/without ZnS powders at varying temperatures is being discussed. More aligned SiC-NWs of small size and good crystalline
structure were formed when ZnS was used. Random SiC-NWs of big size and poor crystalline structure were obtained at conditions
free of ZnS. Furthermore, the improved crystalline structure and increased diameter of SiC-NWs were observed when the higher
temperature was employed.

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