Ion Beam Synthesis of Buried Iron Disilicide

DOI: 10.1007/978-94-011-2714-1_35


Using high dose implantation of Fe+ into (111)Si, followed by rapid thermal annealing (RTA) at 1150°C for 10 s, we fabricated continuous buried layers of the
metallic α-FeSi2 phase. As determined from RBS these α-FeSi2 layers have a stoi-chiometry of Fe0.83Si2, corresponding to ≈ 17 % Fe vacancies. Schottky diodes were fabricated on n-type Si with ideality factors of n=1.4±0.1 and
Schottky barrier heights of ФB=0.85±0.03 eV. DLTS measurements of these diodes showed a concentration of Fe in Si of about 1·1013 cm-3. Semiconducting β-FeSi2 layers were produced by transforming buried α-FeSi2 layers into β-FeSi2 layers by furnace annealing, specifically at 800°C for 17 h.

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