Ion Beam Synthesis of Buried Iron Disilicide
ABSTRACT Using high dose implantation of Fe+ into (111)Si, followed by rapid thermal annealing (RTA) at 1150°C for 10 s, we fabricated continuous buried layers of the
metallic α-FeSi2 phase. As determined from RBS these α-FeSi2 layers have a stoi-chiometry of Fe0.83Si2, corresponding to ≈ 17 % Fe vacancies. Schottky diodes were fabricated on n-type Si with ideality factors of n=1.4±0.1 and
Schottky barrier heights of ФB=0.85±0.03 eV. DLTS measurements of these diodes showed a concentration of Fe in Si of about 1·1013 cm-3. Semiconducting β-FeSi2 layers were produced by transforming buried α-FeSi2 layers into β-FeSi2 layers by furnace annealing, specifically at 800°C for 17 h.
Article: The Properties of Iron in SiliconJournal of The Electrochemical Society - J ELECTROCHEM SOC. 01/1981; 128(3).
Article: Transition metals in silicon[show abstract] [hide abstract]
ABSTRACT: A review is given on the diffusion, solubility and electrical activity of 3d transition metals in silicon. Transition elements (especially, Cr, Mn, Fe, Co, Ni, and Cu) diffuse interstitially and stay in the interstitial site in thermal equilibrium at the diffusion temperature. The parameters of the liquidus curves are identical for the Si:Ti — Si:Ni melts, indicating comparable silicon-metal interaction for all these elements. Only Cr, Mn, and Fe could be identified in undisturbed interstitial sites after quenching, the others precipitated or formed complexes. The 3d elements can be divided into two groups according to the respective enthalpy of formation of the solid solution. The distinction can arise from different charge states of these impurities at the diffusion temperature. For the interstitial 3d atoms remaining after quenching, reliable energy levels are established from the literature and compared with recent calculations.Applied Physics A 12/1982; 30(1):1-22. · 1.55 Impact Factor
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ABSTRACT: We fabricated continuous buried layers of the metallic α-FeSi2 phase by high dose implantation of Fe+ into (111) silicon wafers and subsequent rapid thermal annealing at 1150 °C for 10 s. As determined from Rutherford backscattering spectrometry, these α-FeSi2 layers have a stoichiometry of Fe0.83Si2, corresponding to approximately 17% iron vacancies. Schottky diodes were fabricated on n-type silicon with ideality factors of n = 1.4 ± 0.1 and Schottky barrier heights of . Deep level transient spectroscopy measurements of these diodes showed a low concentration of iron in silicon of about 1 × 1013 cm−3. Semiconducting stoichiometric β-FeSi2 layers were produced by transforming buried α-FeSi2 layers into β-FeSi2 by furnace annealing at 800 °C foor 17 h.Materials Science and Engineering B-advanced Functional Solid-state Materials. 01/1992; 12:115-118.