Article

In-situ monitoring of InP(100) and GaP(100) interfaces and characterization with RDS at 20 K

Journal of Electronic Materials (impact factor: 1.47). 10/2001; 30(11):1425-1428. DOI:10.1007/s11664-001-0196-7 pp.1425-1428

ABSTRACT MOVPE-preparation of highly ordered InP(100) and GaP(100) surfaces was monitored with in-situ reflectance difference spectroscopy
(RDS). Specific ordered P-terminated and ordered cation-terminated surface reconstructions were identified with specific structured
RD spectra with the highest peaks. After contamination-free transfer of the samples to UHV, RDS measurements were performed
also at 20 K. The experimental RD spectrum for the In-terminated, (2×4) reconstructed InP(100) surface shows a remarkable
similarity to a recently published theoretical spectrum, whereas there is only moderate similarity between the experimental
RD spectrum for the (2×4) reconstructed Ga-terminated GaP(100) surface and a recently proposed theoretical spectrum.

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Keywords

cation-terminated surface reconstructions
 
experimental RD spectrum
 
highest peaks
 
published theoretical spectrum
 
RD spectra
 
RDS measurements
 
samples
 
specific
 
UHV