Study of ultrathin iron silicide films grown by solid phase epitaxy on the Si(001) surface
ABSTRACT Ultrathin films of iron silicide have been grown by high-temperature annealing of 0.14-to O.5O-nm-thick Fe films deposited
on the Si(001) surface at room temperature. It has been found that annealing leads to the formation of nanoislands of iron
silicide on the surface, so that their type depends on the thickness of the Fe film. High-energy electron diffraction and
atomic force microscopy measurements have revealed that the deposition of Fe films less than 0.32 nm thick on the Si(001)
surface stimulates epitaxial growth of both three-dimensional β-FeSi2 and two-dimensional γ-FeSi2 islands. It has been found that, for Fe coverages of more than 0.32 nm thick, a complete transition to solide phase epitaxy
is observed only for two-dimensional β-FeSi2 islands. The effect of prolonged annealing at 850°C on the morphology of the surface of the iron silicide film has been investigated.
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ABSTRACT: We systematically studied the formation of various iron–silicide phases, grown on Si(0 0 1) surfaces by solid phase epitaxy, with scanning tunneling microscopy, low-energy electron diffraction and reflection high-energy electron diffraction. We found and studied the phases of c(2 × 2) islands, rectangle-like islands, elongated islands, layered islands, dome-like islands, eddy and cracked structures, and small clusters. A schematic phase diagram of these phases is successfully summarized against iron coverage at room temperature and subsequent annealing temperature.Surface Science. 01/2007;
- Japanese Journal of Applied Physics 01/2004; 43. · 1.07 Impact Factor
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ABSTRACT: The morphology and the structure of thin metastable iron disilicide films grown on Si(001) are studied by scanning tunneling microscopy and X-ray photoelectron diffraction. It is shown that the FeSi2 silicide has a quadratic crystallographic structure, with the c-axis perpendicular to the sample surface. As to the film morphology, the silicide consists of rather flat islands with a √2×√2R45° surface periodicity for a coverage lower than 4 ML. At a nominal Fe coverage of 4 ML, the silicon surface is almost completely covered. The surface exhibits a quite periodic height modulation of about 2 Å.Surface Science - SURFACE SCI. 01/2003; 532:940-945.