Article

MBE-Grown Cubic ZnS Nanowires

Journal of Electronic Materials (impact factor: 1.47). 08/2008; 37(9):1433-1437. DOI:10.1007/s11664-008-0381-z pp.1433-1437

ABSTRACT Ultrathin ZnS nanowires (NWs) were grown on a sapphire (0001) substrate at 430°C by the molecular-beam epitaxy (MBE) technique
using self-assembled Au droplets as the catalyst. It was found that these NWs mainly consist of the cubic phase but a small
portion was in the hexagonal phase. The analysis of the temperature-dependent band-edge (BE) emission of these NWs and that
of a ZnS thin film revealed that the energy shift of the interband transition on temperature in ZnS is mainly attributed to
the electron–phonon interactions. The observed blue shift of the BE emission of ZnS NWs could be quantitatively explained
by the confinement of the excited excitons in the NW geometry.

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Keywords

catalyst
 
confinement
 
cubic phase
 
electron–phonon interactions
 
energy shift
 
excited excitons
 
hexagonal phase
 
interband transition
 
molecular-beam epitaxy
 
NWs
 
observed blue shift
 
Ultrathin ZnS nanowires
 
ZnS NWs
 
ZnS thin film