Structure and electrical properties of HfO2 high- k films prepared by pulsed laser deposition on Si (100)

Applied Physics A (Impact Factor: 1.7). 10/2008; 93(3):681-684. DOI: 10.1007/s00339-008-4695-8


High-k gate dielectric hafnium dioxide films were grown on Si (100) substrate by pulsed laser deposition at room temperature. The
as-deposited films were amorphous and that were monoclinic and orthorhombic after annealed at 500°C in air and N2 atmosphere, respectively. After annealed, the accumulation capacitance values increase rapidly and the flat-band voltage
shifts from −1.34V to 0.449V due to the generation of negative charges via post-annealing. The dielectric constant is in
the range of 8–40 depending on the microstructure. The I–V curve indicates that the films possess of a promising low leakage
current density of 4.2×10−8A/cm2 at the applied voltage of −1.5V.

10 Reads
  • [Show abstract] [Hide abstract]
    ABSTRACT: The N2 atmosphere postannealing is introduced to improve the interfacial quality and the dielectric properties of HfO2 films prepared by pulsed laser deposition. The disappearance of interface layer between HfO2 film and Si substrate and the decrease of leakage current densities after annealing are further confirmed by high-resolution cross-sectional transmission electron microscopy investigation and electrical measurement. Electric conduction analysis results show that the dominant leakage current conduction mechanisms of the annealed HfO2 film are the Schottky emission at low electric field, the trap-assisted tunneling, and space-charge-limited current at high electric field for the gate and substrate injections, respectively.
    Applied Physics Letters 11/2008; 93(20):202904-202904-3. DOI:10.1063/1.3033526 · 3.30 Impact Factor
  • [Show abstract] [Hide abstract]
    ABSTRACT: Nitrogen is incorporated into thin HfO2 films by pulsed laser deposition using in situ ionized nitrogen. The improved thermal stability and interfacial microstructure are further confirmed by high-resolution transmission electron microscopy. The composition of the thin film is investigated by x-ray photoelectron spectroscopy and electron energy-loss spectroscopy. Electrical studies show a property permittivity of 27.7 and low leakage current density were achieved by incorporation of a small amount (about 1 at. %) of nitrogen. The dominant conduction mechanisms of the Pt/HfO2/p-Si structure are trap-assisted tunneling and Schottky emission at low electric field for the gate and substrate injection, respectively.
    Applied Physics Letters 07/2009; 95(3). DOI:10.1063/1.3184577 · 3.30 Impact Factor
  • Source
    [Show abstract] [Hide abstract]
    ABSTRACT: Hafnium oxynitride films are deposited from a Hf target employing direct current magnetron sputtering in an Ar-O2-N2 atmosphere. It is shown that the presence of N2 allows for the stabilization of the transition zone between the metallic and the compound sputtering mode enabling deposition of films at well defined conditions of target coverage by varying the O2 partial pressure. Plasma analysis reveals that this experimental strategy facilitates control over the flux of the O- ions which are generated on the oxidized target surface and accelerated by the negative target potential toward the growing film. An arrangement that enables film growth without O- ion bombardment is also implemented. Moreover, stabilization of the transition sputtering zone and control of the O- ion flux without N2 addition is achieved employing high power pulsed magnetron sputtering. Structural characterization of the deposited films unambiguously proves that the phase formation of hafnium oxide and hafnium oxynitride films with the crystal structure of HfO2 is independent from the O- bombardment conditions. Experimental and theoretical data indicate that the presence of vacancies and/or the substitution of O by N atoms in the nonmetal sublattice favor the formation of the cubic and/or the tetragonal HfO2 crystal structure at the expense of the monoclinic HfO2 one.
    Journal of Applied Physics 07/2010; 108(1):4904-014904. DOI:10.1063/1.3437646 · 2.18 Impact Factor
Show more

Similar Publications