Article

Improved Gettering Efficiency of Ni from Nickel-Mediated Crystallization Silicon Using Phosphorus-Doped Amorphous Silicon

Journal of Electronic Materials (impact factor: 1.47). 05/2012; 38(6):767-771. DOI:10.1007/s11664-009-0750-2 pp.767-771

ABSTRACT Ni-metal-induced lateral crystallization (NILC) has been utilized to fabricate polycrystalline silicon thin-film transistors.
However, the NILC process often leads to Ni and NiSi2 precipitates being trapped. In this study, two kinds of films were used as gettering layers: (1) amorphous Si and (2) phosphorus-doped
amorphous Si. After annealing at 550°C for 12h, it was found that phosphorous dopant did improve the gettering efficiency
of amorphous Si.

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Keywords

fabricate polycrystalline silicon thin-film transistors
 
gettering efficiency
 
Ni-metal-induced lateral crystallization
 
NILC process
 
NiSi2 precipitates