Improved Gettering Efficiency of Ni from Nickel-Mediated Crystallization Silicon Using Phosphorus-Doped Amorphous Silicon
ABSTRACT Ni-metal-induced lateral crystallization (NILC) has been utilized to fabricate polycrystalline silicon thin-film transistors.
However, the NILC process often leads to Ni and NiSi2 precipitates being trapped. In this study, two kinds of films were used as gettering layers: (1) amorphous Si and (2) phosphorus-doped
amorphous Si. After annealing at 550°C for 12h, it was found that phosphorous dopant did improve the gettering efficiency
of amorphous Si.