Article

Self-assembled flower-like nanostructures of InN and GaN grown by plasma-assisted molecular beam epitaxy

Bulletin of Materials Science (impact factor: 0.88). 04/2012; 33(3):221-226. DOI:10.1007/s12034-010-0034-8 pp.221-226

ABSTRACT Nanosized hexagonal InN flower-like structures were fabricated by droplet epitaxy on GaN/Si(111) and GaN flower-like nanostructure
fabricated directly on Si(111) substrate using radio frequency plasma-assisted molecular beam epitaxy. Powder X-ray diffraction
(XRD) and scanning electron microscopy (SEM) were used to study the crystallinity and morphology of the nanostructures. Moreover,
X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) were used to investigate the chemical compositions and optical
properties of nano-flowers, respectively. Activation energy of free exciton transitions in GaN nano-flowers was derived to
be ∼28.5 meV from the temperature dependent PL studies. The formation process of nano-flowers is investigated and a qualitative
mechanism is proposed.

KeywordsNitrides-nano-flowers-photoluminescence-RF-MBE

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Keywords

crystallinity
 
droplet epitaxy
 
formation process
 
free exciton transitions
 
KeywordsNitrides-nano-flowers-photoluminescence-RF-MBE
 
Nanosized hexagonal InN flower-like structures
 
photoluminescence
 
PL
 
radio frequency plasma-assisted molecular beam epitaxy
 
scanning electron microscopy
 
temperature dependent PL studies
 
X-ray photoelectron spectroscopy