Article

Heterodyne Random Bit Generation Using an Optically Injected Semiconductor Laser in Chaos

Department of Electronic Engineering, City University of Hong Kong, Hong Kong, China.
Optics Letters (Impact Factor: 3.18). 06/2012; 37(11):2163-5. DOI: 10.1364/OL.37.002163
Source: PubMed

ABSTRACT Random bit generation is experimentally demonstrated using a semiconductor laser driven into chaos by optical injection. The laser is not subject to any feedback so that the chaotic waveform possesses very little autocorrelation. Random bit generation is achieved at a sampling rate of 10 GHz even when only a fractional bandwidth of 1.5 GHz within a much broader chaotic bandwidth is digitized. By retaining only 3 least significant bits per sample, an output bit rate of 30 Gbps is attained. The approach requires no complicated postprocessing and has no stringent requirement on the electronics bandwidth.

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    • "1 (LD+OF) x2 XOR 1 2,08 2,08 Harayama et al., Phys. Rev. A 83, 031803(R) (2011) 2011 LD + OF (polarization) 8-bit + LSB 4 10 40 Oliver et al., Opt. Lett. 36, 4632-4634 (2011) 2012 (LD+OF) + (LD+OI) 8-bit + bit reverse + XOR 8 50 400 Akizawa et al., IEEE Photonics Technol. Lett. 24, 1042-1044 (2012) 2012 LD+OI 8-bit + time-shift + XOR + LSB 3 10 30 Li et al., Opt. Lett. 37, 2163-2165 (2012) 2013 LD + OF (polarization) 8-bit + LSB 4 40 160 Oliver et al., IEEE J. Quantum Electron. 49, 910-918 (2013) 2013 LD + OI 8-bit + time-shift + XOR + LSB 5 20 100 Li et al., IEEE J. Quantum Electron. 49, 829-838 (2013) 2014 VCSEL 8-bit + time-shift + LSB 5 20 100 Virte et al., Opt. Express 22, 17271-17280 (2014)"
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    ABSTRACT: An overview of chaos in laser diodes is provided which surveys experimental achievements in the area and explains the theory behind the phenomenon. The fundamental physics underpinning this behaviour and also the opportunities for harnessing laser diode chaos for potential applications are discussed. The availability and ease of operation of laser diodes, in a wide range of configurations, make them a convenient test-bed for exploring basic aspects of nonlinear and chaotic dynamics. It also makes them attractive for practical tasks, such as chaos-based secure communications and random number generation. Avenues for future research and development of chaotic laser diodes are also identified.
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    • "The low-and high-frequency oscillations used for clock recovery have been intensively studied in the past ten years [5]–[10]. Recently, the chaotic feature of MISL has attracted significant attention due to their deterministic nature, broadband and noise-like spectral distribution, which are very attractive in high speed random bit generation [11], [12], chaos synchronization communication [13]–[17], and precision ranging of lidar systems [18]–[20]. Among various MISL, amplified feedback laser (AFL) is a typical and important example, which has been shown to be capable of working in dispersive Q-switching (DQS) pulsation mode, mode-beating (M-B) mode [21] and chaos [22], [23]. "
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    ABSTRACT: The dynamics of monolithically integrated amplified feedback lasers (AFL) is investigated through numerical simulation and experimental verification. The period-doubling route to chaos and high-frequency microwave generation are demonstrated through simulation. Then, we design and fabricate monolithically integrated AFLs. Mappings of dynamic states and oscillation frequency in the parameter space of phase section current $I_{rm P}$ and amplifier section current $I_{rm A}$ are depicted. For relative small $I_{rm A}$, the period doubling evolution to chaos is presented with the increase of $I_{rm P}$ . For the relative large $I_{rm A}$, a high-frequency mode-beating (M-B) pulsation can be observed under suitable value of $I_{rm P}$. The oscillation frequency of period-one is about 10 GHz and the frequency of M-B pulsation is over 40 GHz for the device with a total length of 780 μm.
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    • "These nonlinear dynamics have many potential applications in random number generation [4], chaotic radar [5], secured communication [6], and photonic microwave generation [7]. In the past decades, most of researches have been devoted to understand the dynamics and applications of single-beam optical injection semiconductor laser system [1] [2] [3] [4] [5] [6]. Recently, the nonlinear dynamics in dual-beam optical injection semiconductor laser system has attracted much attention [7] [8] [9]. "
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