Article

Spin-Based Neuron Model with Domain Wall Magnets as Synapse

05/2012; DOI:10.1109/TNANO.2012.2202125
Source: arXiv

ABSTRACT We present artificial neural network design using spin devices that achieves
ultra low voltage operation, low power consumption, high speed, and high
integration density. We employ spin torque switched nano-magnets for modelling
neuron and domain wall magnets for compact, programmable synapses. The spin
based neuron-synapse units operate locally at ultra low supply voltage of 30mV
resulting in low computation power. CMOS based inter-neuron communication is
employed to realize network-level functionality. We corroborate circuit
operation with physics based models developed for the spin devices. Simulation
results for character recognition as a benchmark application shows 95% lower
power consumption as compared to 45nm CMOS design.

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Keywords

45nm CMOS design
 
character recognition
 
compact
 
domain wall magnets
 
models
 
nano-magnets
 
network-level functionality
 
neuron-synapse units
 
programmable synapses
 
torque
 
ultra low supply voltage
 
ultra low voltage operation