Magnetic states and optical properties of single-layer carbon-doped hexagonal boron nitride
ABSTRACT We show that carbon-doped hexagonal boron nitride (h-BN) has extraordinary
properties with many possible applications. We demonstrate that the
substitution-induced impurity states, associated with carbon atoms, and their
interactions dictate the electronic structure and properties of C-doped h-BN.
Furthermore, we show that stacking of localized impurity states in small C
clusters embedded in h-BN forms a set of discrete energy levels in the wide gap
of h-BN. The electronic structures of these C clusters have a plethora of
applications in optics, magneto-optics, and opto-electronics.