Conference Proceeding

Fully Depleted SOI MOSFETs with WSix metal gate on HfO2 gate dielectric

CEA/DRT-LETI, Grenoble
IEEE International SOI Conference 11/2006; DOI:10.1109/SOI.2006.284487 In proceeding of: International SOI Conference, 2006 IEEE
Source: IEEE Xplore

ABSTRACT For the first time, we report ultra-thin fully depleted silicon-on-insulator MOS transistors with WSix metal gate on HfO gate dielectric down to 40nm gate length. Gate work function, short channel performance and carrier mobility are presented and compared to TiN gate devices. Higher mobility values are obtained with a WSix metal gate device in comparison with a TiN metal gate transistor

0 0
 · 
0 Bookmarks
 · 
8 Views
Data provided are for informational purposes only. Although carefully collected, accuracy cannot be guaranteed. The impact factor represents a rough estimation of the journal's impact factor and does not reflect the actual current impact factor. Publisher conditions are provided by RoMEO. Differing provisions from the publisher's actual policy or licence agreement may be applicable.

Keywords

40nm gate length
 
Gate work function
 
HfO gate dielectric
 
Higher mobility values
 
short channel performance
 
silicon-on-insulator MOS transistors
 
TiN gate devices
 
TiN metal gate transistor
 
WSi<sub>x </sub> metal gate device
 
WSi<sub>x</sub> metal gate
 

J. Widiez