Conference Paper

Deep-level transient spectroscopy in InGaAsN lattice-matched to GaAs

Nat. Renewable Energy Lab., Golden, CO, USA
DOI: 10.1109/PVSC.2002.1190779 Conference: Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Source: IEEE Xplore

ABSTRACT Deep-level transient spectroscopy (DLTS) measurements have been performed on the quaternary semiconductor InGaAsN. A series of as-grown, metalorganic chemical vapor deposited samples having varying composition were grown and measured. A GaAs sample was used as a baseline for comparison. After adding only In to GaAs, we did not detect significant additional defects; however, adding N and both N and In led to larger hole-trap peaks and additional electron-trap peaks in the DLTS data. The samples containing about 2% N, with and without about 6% In, had electron traps with activation energies of about 0.2 and 0.3 eV. A sample with 0.4% N had an electron trap with an activation energy of 0.37 eV.

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