Conference Paper

Multi-wafer growth and processing of 0.6-eV InGaAs monolithic interconnected modules

Emcore Photovoltaics, Albuquerque, NM, USA
DOI: 10.1109/PVSC.2002.1190722 Conference: Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Source: IEEE Xplore


Recent progress in the optical and electrical performance of monolithic interconnected modules (MIMs) has produced an interest in manufacturing large quantities of cells for evaluation. Information resulting from this evaluation is necessary to produce and optimize a TPV system, where a large number of devices with a nominal performance must be available for insertion into series/parallel electrical networks. In this work over 130 wafers comprising three different device designs were grown, with representative wafers from each design processed in a pilot-line manufacturing environment. This paper describes the material growth, device design and processing, and electrical performance of these cells.

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    • "Under this assumption we would expect /junction for a fully processed MBE-grown MIM device of 415–420 mV. These values are comparable to values obtained for similar 0.6-eV bandgap TPV devices grown by MOVPE, which employed InAs buffers twice the thickness of the MBE buffers reported here [7], [11], [12]. The fact that high performance was achieved with the thinner buffer Fig. 3. Variation of short-circuit current density (J ) with open-circuit voltage (V ) and fill factor (FF) with J for a SJ TPV with Eg = 0:60 eV obtained as a function of incident light intensity. "
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    ABSTRACT: Single-junction, lattice-mismatched (LMM) In/sub 0.69/Ga/sub 0.31/As thermophotovoltaic (TPV) devices with bandgaps of 0.60 eV were grown on InP substrates by solid-source molecular beam epitaxy (MBE). Step-graded InAs/sub y/P/sub 1-y/ buffer layers with a total thickness of 1.6 /spl mu/m were used to mitigate the effects of 1.1% lattice mismatch between the device layer and the InP substrate. High-performance single-junction devices were achieved, with an open-circuit voltage of 0.357 V and a fill factor of 68.1% measured at a short-circuit current density of 1.18 A/cm/sup 2/ under high-intensity, low emissivity white light illumination. Device performance uniformity was outstanding, measuring to better than 1.0% across a 2-in diameter InP wafer indicating the promise of MBE growth for large area TPV device arrays.
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