Conference Paper

Quantum dot laser diodes: physics, progress and potential

Cardiff Univ., UK
DOI: 10.1109/CLEO.2002.1034317 Conference: Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Source: IEEE Xplore

ABSTRACT This tutorial is intended for those with a background in the area of diode lasers but with no specialist knowledge of quantum dot structures and lasers. The aim is to summarise the basic principles of quantum dot lasers and the current status of their development, and to assess their future potential.

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    ABSTRACT: In this work, we have created a new type of structure, the nanopore active layer, for achieving quantization of carrier states in a semiconductor. The nanopore structure consists of a periodic two-dimensional array of localized energy barriers perturbing an otherwise conventional quantum well. This perturbation leads to the formation of intraband forbidden energy gaps which are observed experimentally.
    IEEE Photonics Technology Letters 03/2008; · 2.04 Impact Factor