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Extraction of Power Dissipation Profile in an IC Chip from Temperature Map

Xi Wang, Ali Shakouri*, Sina Farsiu and Peyman Milanfar

Department of Electrical Engineering

University of California Santa Cruz

Santa Cruz, CA 95064, U.S.A.

*Phone: 1-831-459-3821

*Email: ali@soe.ucsc.edu

Abstract

In this paper, we present a new technique to calculate the

power dissipation profile from the IC temperature map using

an analogy with image processing and restoration. In this

technique, finite element analysis (FEA) is used to find the

heat point spread function of the IC chip. Then, the

temperature map is used as input for an efficient image

restoration algorithm which locates the sources of strong

power dissipation non-uniformities. Therefore, for the first

time we optimally solve the inverse heat transfer problem, and

estimate the IC power map without involving extensive lab

experiments. Our computationally efficient and robust method,

unlike some previous techniques in the literature, is applicable

to virtually any experimental scenario. Simulation results on a

typical commercial IC device confirm the effectiveness of our

proposed method.

Keywords

Thermal non-uniformity, power map, temperature map,

heat point spread function, image restoration, thermal

management.

Nomenclature

g

n

f

temperature map ()

C

0

noise ()

C

0

power map ()

2

/cmW

H

I

S

P

α

µ

λ

heat point spread function (

unit matrix

shifting operator

bilateral filter kernel size

scalar weight

steepest descent step size

)

WC /

0

regularization parameter

Superscripts

l

m

pixel number in vertical direction

pixel number in horizontal direction

Subscripts

x

y

k

vertical direction

horizontal direction

iteration index

1. Introduction

Thermal issues are one of the key factors limiting the

performance and reliability of state-of-the-art electronic and

optoelectronic devices and integrated circuits. As switching

speed increases and device feature sizes are further

miniaturized, localized heating problems are exasperated [1].

Temperature map measurement of an IC chip is a well-

established and powerful technique that allows chip designers

and process engineers to identify strong temperature non-

uniformity (hot-spot) locations where there are fabrication

failures [1-9]. However, a temperature map, by itself, often

fails to provide enough information for IC thermal inspection,

due to the fact that the formation of temperature non-

uniformities can be highly complex. Note that, even one

single hot-spot is often contributed by multiple discrete heat

sources, and therefore the power dissipation profile has to be

obtained and studied in order to achieve effective thermal

management.

Typically, chip designers provide the power map to

package engineers to calculate the temperature map of the

chip taking into account thermal properties of the die and the

package. Since the characteristic length scales of the

transistors, various functional units, the die, and the package

range from sub-microns to centimeters, accurate thermal

analysis is done using sophisticated finite element solvers and

multi grid algorithms. To identify fabrication or device

failures, the calculated temperature map of the IC chip is

compared to a measured one. For a more quantitative analysis

of power dissipation and its spatial extent in the hot-spots, a

novel iterative method is recently proposed where the

temperature map is calculated for a series of power maps and

the best match is experimentally identified [10]. However,

these methods are accurate and useful only when few heat

sources are in the chip. Unfortunately, in the more complex

case of commercial ICs composed of numerous heat sources,

the number of parameters involved becomes prohibitively

large making this problem unsolvable even if the adaptive

masking technique [10] is utilized. Also, very recently there

have been some attempts to calculate the power map from the

measured temperature map by implementing an experimental

direct inverse filter [11]. This was done using extensive

characterization of the dies by applying point heat sources at

various locations and measuring the resulting temperature

maps. However, since the measurements are noisy and the

problem is ill-posed, the results obtained from such direct

inverse filtering technique will always be suboptimal [12].

1-4244-0959-4/07/$25.00 © 2007 IEEE

23rd IEEE SEMI-THERM Sym posium

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In this paper, by using an analogy with image processing

and restoration, we present a fast and optimal numerical

solution to this inverse problem, which takes input from the

temperature map and outputs the power map. Unlike the

method in [10-11], our technique is much less sensitive to

noise and outliers. The detailed algorithm is explained in

Section 2, Section 3 presents an illustrative example, and

concluding remarks are given in Section 4.

2. The Optimal Numeric Solution

Extracting power dissipation profile of an IC chip from its

temperature map is done in two steps: one, estimating the heat

point spread function and scaling function, and two,

reconstructing the power map. The details of the proposed

algorithm are discussed in the following subsection.

2.1 Image Processing Essence of Heat Spreading

Behavior

The IC chip temperature map is essentially a superposition

of the resulting temperature fields of each individual heat

source. Therefore, instead of the typical and computationally

very expensive method of solving the differential heat

conduction equation for the complex model of the modern ICs,

we characterize the heat spreading behavior as a spatial image

filtering process. Such spatial filtering technique improves

the computation time by a factor of more than a thousand,

while accurate within 0.8Co [13].

In our approach, the power map is treated as a gray value

digital image which is basically a matrix of numerical

representations of tonal values. As illustrated in Fig.1, the

process of spatial filtering replaces the value of each pixel in

the input image (power map) with a new value on the output

image (temperature map).

Figure 1: Concept of spatial filtering

Mathematically speaking, this is a convolution process,

which can be described by the following equation

a

=∑

−=

Wang, Extraction of Power Dissipation Profile in an IC chip…

23rd IEEE SEMI-THERM Sym posium

),,(

),(),(),(

,

yxn

lymxflmHyxg

alm

+++

(1)

where

simulating heat spreading behavior, power dissipation profile

(power map) on the surface of an IC chip is represented by

the matrix

. According to Equation 1, by convolving this

power map (

) with the spatial filter representing the heat

point spreading function (

H ), the IC chip temperature map,

g , is estimated. In reality, the temperature measurements are

inevitably contaminated by noise, which we model as additive

white Gaussian (

). Note that, when operating around the IC

boundaries, a position dependant scaling function effectively

scales down the heat point spread function. This scaling

function can be easily estimated by using an FEA tool or a

simple analytical approximation as in Ref. [13]. Figures 2-3

compare the temperature maps estimated by the FEA and the

spatial filtering techniques.

2 / ) 1

−

(

= wa

for a size filter. In the case of

ww×

f

f

n

X

Figure 2: Estimated IC temperature map by (a) using FEA

software (ANSYS) and (b) spatial filtering (Power Blurring)

technique (Error<0.8Co).

Figure 3: Estimated temperature profile along the diagonal

axis using FEA and spatial filtering techniques.

Input image (Value of

each pixel is replaced.)

Filter (3×3)

(a) Finite element simulated (b) Spatially filtered

Y

Y

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2.2 Heat Point Spread Function

So far, we have shown that the computationally efficient

image spatial filtering technique can be used to accurately

calculate the dynamic and static temperature profiles in IC

chips. In fact image blurring is a mathematically rigorous

technique as the point spread function used in image analysis

is the Green’s function response of the system. The analytical

Green’s function can be calculated only when the sample

geometry is simple, while the point-spread function can be

calculated numerically and applied to a variety of die sizes

and packages. In cases where different floorplans of an IC

chip are investigated, the heat point spread function can be

easily parameterized for different configurations. Since the

major part of the heat spreading happens in the silicon

substrate, the shape of the heat point spread function does not

change very much for different packages.

To find the heat point spread function, the temperature

impulse response of the system is estimated via the

application of a delta function power using a FEA software

(ANSYS). A typical heat point spread function is shown in

Figure 4.

Figure 4: A 3D illustration of a typical point heat spread

function estimated by a FEA software (ANSYS).

Wang, Extraction of Power Dissipation Profile in an IC chip…

23rd IEEE SEMI-THERM Sym posium

2.3 Power Trace Algorithm

In the previous section, following [13], we showed that

the temperature map is related to the power map through a

forward model (spatial filtering process of Equation 1). Using

this forward model, in this section we define an inverse

problem to estimate the IC power map from the simulated (or

measured) temperature map. Our approach for solving such

inverse problem is inspired from recent image restoration

techniques for recovering high quality images from noisy and

incomplete measurements [15].

We represent the matrix notion of (1) as

nfHg

+=

, (2)

where H is the matrix representation of heat point spread

function. Vectors f , g , and nrepresent the power map, the

simulated (or measured) temperature map, and the modeling

(or measurement) noise, respectively, which are rearranged in

lexicographic order. With this model, least-squares approach

][ ArgMin

f

ˆ

f

2

2

gfH

−=

(3)

will result in a maximum likelihood (ML) estimate, where

fˆis the reconstructed (estimated) power density distribution.

However, such solution is not stable, which means even small

amount of noise will result in large perturbations in the final

solution.

Therefore, considering an efficient regularization term

which delivers some general prior information for picking a

stable and reliable solution in the alternative maximum a

posteriori (MAP) framework is indeed necessary [14]. The

Tikhonov [15] regularization

regularization term in the image processing literature, which

forces spatial smoothness in the estimated image. However,

noting that the recovered power map ( f ) mimics the shape

of the physical heat generating elements with sharp edges (e.g.

note Figure 8.a), Tikhonov regularization is not appropriate

for our specific application. Alternatively, in this paper, we

exploit a novel regularization term called Bilateral Total-

Variation (BTV) [16], which reconstructs images with sharp

edges while preserving fine details.

Such MAP cost function which outputs the localized

power map is then represented as

is the most popular

][ ArgMin

f

ˆ

f

,

1

2

2

∑

=

l

−

+

−+−=

P

Pm

l

y

m

x

lm

fSSfgfH

αλ

, (4)

(a) Side view (b) Top view

where the scalar λ is the regularization parameter, which

properly weights the first term (likelihood cost) against the

second term (BTV regularization cost).

and are the

operators corresponding to shifting the image represented by

f by pixels in horizontal direction and m pixels in

vertical direction, respectively. The scalar weight

applied to give a spatially decaying effect to the summation of

the regularization terms, as determined by the scalarP .

The corresponding steepest

minimization can be expressed as

{

−=

+

kkk

fHHff

1

(

m

x S

l

y S

l

α is

descent solution of

⎭

⎬

⎫

−−

+−

∑

=

l

,

−

−

x

−

y

+

P

Pm

k

l

y

m

x

k

ml

lm

T

f

ˆ

SSf

ˆ

SSI

g

)( sign][

)

ˆˆˆ

αλ

µ

, (5)

where µ is another scalar defining the steepest descent step

size in the direction of the gradient, and sign(.)is a function

representing the element-by-element “sign” operation

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(replacing the positive elements with 1, the negative elements

with -1, and zero elements with 0).

3. Numerical Results

By using the algorithm described above we are able to

efficiently and accurately solve the inverse heat spreading

problem with high noise tolerance on the input temperature

map. We demonstrate the applicability of the proposed

technique by testing it on a typical commercial packaged IC

chip (Figure 5). For the purpose of evaluating our results, we

obtained the true power map from the designers of the IC chip,

which is shown in Figure 6.

Figure 5: IC package structure and materials.

Material

(

mW

/

Silicon 117.5

Copper 395

TIM1 5.91

TIM2 3.5

Table 1: Material thermal properties (TIM represents thermal

interface material)

This flip package model consists of a 1

die IC and a Cu heat sink with an intermittent heat spreading

layer surrounded by package lids. The matrix representation

of the power map is defined by dividing the die on an

orthogonal mesh with congruent elements of size

0.25

×0.25. The material thermal properties of this

chip are listed in Table 1. Further, the dominant heat transfer

path is considered to be through the back of the IC chip and

the Cu heat sink. We neglect the heat transfer from top of the

chip through metallization layers and board, since it is a

relatively small fraction of the total heat dissipation.

Following the model in (2), based on the true power map

and package structure, we generated a temperature map of the

IC chip (Figure 7). Zero mean Gaussian white noise with

variance of one was later added to the temperature map, to

simulate noise contamination.

To define the point heat spread function, we applied a

6,250

heat flux to a single element of size 6.25×10

/cmW

located in the center of the IC, and waited until the

temperature distribution reached the steady-state. The

resulting temperature profile was normalized by the amount

of heat applied to produce it, with units of

Thermal

Conductivity

)

K

−

Density

(

Kg

)

3

/m

2330

8933

1930

1100

Wang, Extraction of Power Dissipation Profile in an IC chip…

23rd IEEE SEMI-THERM Sym posium

×1cm silicon

cm

cmcm

2

-4

.

2

cm

WC /

0

The power map of IC chip was extracted using the Power

Trace algorithm that is described in Section 2.3, the result of

which is shown in Figure 8(b). Comparing with Figure (a),

which is the true power map in gray scale, power map

extracted by using Power Trace algorithm remarkably regains

the contour of most heating sources and illustrates even the

very fine and tiny structures. Such fine details are not

resolvable using the direct power map inverting technique of

Ref. [11], illustrated in Figure 8(c).

Figure 6: Power map of the IC chip from design file

(1

×1). The regions and numbers in power profile

indicate the areas where power is applied (with units of

W/cm

cmcm

2).

Figure 7: Temperature map of IC chip with Gaussian white

noise contamination.

Figure 9 shows a cross-section comparison of the true

power map (blue dash line), power map extracted using the

Power Trace (green solid line), power map obtained using

direct inverting method (pink cross), and the input

temperature map (red circle) along the center line (horizontal

direction). It should be noted that the value at each pixel is

represented by gray value from the image processing

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perspective. The power and the temperature maps are shown

in arbitrary units.

Wang, Extraction of Power Dissipation Profile in an IC chip…

23rd IEEE SEMI-THERM Sym posium

Figure 8: IC power maps (a) true (b) extracted using Power

Trace algorithm (c) extracted using direct inverse

4. Conclusions

In this paper, we presented a new computationally

efficient and accurate IC thermal analysis technique, for

estimating the power dissipation profile from the estimated

(or measured) temperature map. This approach is inspired

from a recent robust image restoration method [16]. The

procedure for applying this new analysis tool requires two

simple steps: (1) Estimating the heat point spread function by

using an FEA software while using a scaling function to

address the boundary problems. This step requires some

knowledge about the chip and package dimension and IC’s

material thermal properties, which are commonly included in

the chip/package design files. (2) Exploiting the estimated

temperature map and solving an inverse problem to obtain the

power map. The inverse problem was solved through a MAP

estimation framework in which a robust regularizer is used to

stabilize the solution.

(a) True

Figure 9: Cross-section comparison of true power map (blue

dash line), power map extracted using Power Trace (green

solid line), power map obtained using direct inverting (pink

cross), and the input temperature map (red circle) along the

center line (horizontal direction).

Our numerical results attest to the effectiveness of this

technique for identifying the power sources of temperature

non-uniformities. Our experiments were preformed on a

typical commercially packaged silicon IC device, the power

sources of which were unidentifiable using the state-of-the-art

technique in the literature [11].

Our proposed purely software-based IC thermal analysis

technique does not require sophisticated and expensive lab

equipments, and is computationally very efficient. Moreover,

it is extremely easy to couple or associate our proposed

technique with other thermal-electrical investigating systems.

Furthermore, unlike the methods in literature [10-11], our

technique does not rely on calibration measurements in an

actual IC chip. Also, such numerical framework makes it

possible to calculate the power maps at much higher-

resolution compared to the experimental based techniques. All

this makes our method very suitable for practical applications.

We would also like to note that by coupling our proposed

technique with the in-depth temperature probing methods,

(b) Power Trace

(c) Direct inverse

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Wang, Extraction of Power Dissipation Profile in an IC chip…

23rd IEEE SEMI-THERM Sym posium

such as “Infrared see through” or “Raman 3D temperature

probing” [1], this 2-D technique can be extended for power

mapping in 3-D.

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