Conference Proceeding

A Miniaturized 0.5-Watt Q-band 0.25-μm GaAs PHEMT High Power Amplifier MMIC

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10/2002; DOI:10.1109/EUMA.2002.339227 pp.1 - 4 In proceeding of: Microwave Conference, 2002. 32nd European
Source: IEEE Xplore

ABSTRACT The performance of a very compact power amplifier MMIC for Q-band applications is reported. Using a 4-inch 0.25-μm GaAs power PHEMT process, this 4-stage amplifier achieved a linear gain of 19 dB over the 36 to 45 GHz frequency range, with an output power at 1-dB gain compression of 26 dBm (P-1dB=400 mW), and a saturated output power of 0.5 Watt (Psat=27 dBm), for a chip size of only 2.25 mm2 (1.25 × 1.8 mm2). Compared to state-of-the-art power amplifier MMICs operating in the 36-43 GHz frequency range, the combined output power- and gain- densities per chip area are nearly a factor two higher, namely 220 mW/mm2 and 8.5 dB/mm,sup>2.

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    Conference Proceeding: Compact and broadband microstrip power amplifier MMIC with 400-mW output power using 0.15-/spl mu/m GaAs PHEMTs
    A. Bessemoulin, S. Mahon, A. Dadello, G. McCulloch, J. Harvey
    [show abstract] [hide abstract]
    ABSTRACT: The performance of a compact power amplifier MMIC for 35 to 45 GHz applications is reported. Using a standard 6-inch, 0.15-/spl mu/m GaAs power PHEMT technology on 100-/spl mu/m substrate thickness, in combination with appropriate compact circuit topologies, this microstrip power amplifier achieved a linear gain of more than 24 dB over the 36 to 45 GHz frequency range. At 5 V and 500 mA bias, an output power at 1-dB compression of 26 dBm (P/sub -1 dB/=400 mW) was measured in the 37/spl sim/40 GHz band, with a saturated output power up to 0.5 Watt (P/sub sat/=27 dBm). The total chip size is only 3.6 mm/sup 2/ (2.4 /spl times/ 1.5 mm/sup 2/); compared to conventional power amplifier MMICs operating at these frequencies, the combined output power and gain densities per chip area are a factor two higher.
    Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European; 11/2005
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    Article: Compact and broadband microstrip power amplifier MMIC with 400-mW output power using0.15-µm GaAs PHEMTs
    A. Bessemoulin, S. Mahon, Anna Dadello, G. McCulloch, J. Harvey
    [show abstract] [hide abstract]
    ABSTRACT: The performance of a compact power amplifier MMIC for 35 to 45 GHz applications is reported. Using a standard 6-inch, 0.15-µm GaAs power PHEMT technology on 100-µm substrate thickness, in combination with appropriate compact circuit topologies, this microstrip power amplifier achieved a linear gain of more than 24 dB over the 36 to 45 GHz frequency range. At 5 V and 500 mA bias, an output power at 1-dB compression of 26 dBm (P-1dB=400 mW) was measured in the 37~40 GHz band, with a saturated output power up to 0.5 Watt (Psat=27 dBm). The total chip size is only 3.6 mm2 (2.4 1.5 mm2); compared to conventional power amplifier MMICs operating at these frequencies, the combined output power and gain densities per chip area are a factor two higher.
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Keywords

36-43 GHz frequency range
 
4-inch 0.25-μm GaAs power PHEMT process
 
45 GHz frequency range
 
chip size
 
combined output power-
 
gain- densities
 
linear gain
 
Q-band applications
 
Watt