Conference Paper

Very High Speed SiGe Heterojunction Bipolar Transistor Reliability Overview

DOI: 10.1109/ICCDCS.2006.250849 In proceeding of: Devices, Circuits and Systems, Proceedings of the 6th International Caribbean Conference on
Source: IEEE Xplore

ABSTRACT We discuss the major reliability mechanisms and the implications arising from the structural changes required for the implementation of state of the art SiGe HBT's. The current gain shift under forward and reverse device operating conditions has been characterized for 120, 200 and 350 GHz transistors. The effects of electromigration and self-heating versus fT have also been studied. In general, it should be possible to continue scaling beyond today's 350 GHz devices, with straightforward extension of the mechanisms and concerns outlined in this paper

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