Conference Proceeding

Uniform and High-Power Characteristics of AlGaInP-based Laser Diodes by 4-inch Wafer Process Technology for DVD-R/RW/RAM

Eudyna Devices Inc., Yamanashi
02/2006; DOI:10.1109/ISLC.2006.1708082 pp.53 - 54 In proceeding of: Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International
Source: IEEE Xplore

ABSTRACT In this study, we demonstrate the high-power (over 400 mW) at 75 degC single-lateral-mode operation of a 650-nm band LD, and we present the excellent uniformity of LD characteristics in 4-inch wafer. In summary, we have successfully fabricated high-power and single-lateral-mode 650-nm band AlGaInP LDs by using the 4-inch wafer process technology for the first time. The results confer the promising way to realize the high-speed (over 8times) dual layer recordable DVD systems

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Keywords

4-inch wafer
 
4-inch wafer process technology
 
8times
 
promising way
 
single-lateral-mode 650-nm band AlGaInP LDs
 

H. Sumitomo