Conference Paper

Effect of gain saturation and nonradiative recombination on the thermal characteristics of InAs/GaAs 1.3 μm quantum dot lasers

Adv. Technol. Inst., Surrey Univ., UK
DOI: 10.1109/LEOS.2005.1548048 Conference: Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Source: IEEE Xplore


Gain saturation increases the radiative component, Jrad, of the threshold current density, Jth, and its contribution to the thermal sensitivity of Jth in short cavity or low QD density devices. However, the main cause of their thermal sensitivity is a strong non-radiative recombination.

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