C-band single-chip GaN-FET power amplifiers with 60-W output power
ABSTRACT A C-band high power amplifier was successfully developed with a single-chip GaN-based FET. At 4.0GHz, the fabricated 24-mm wide FET delivers 62 W and 156W under CW and pulsed operating conditions, respectively with a universal test fixture. The internal matching circuit was designed to be set up in a half-size package as compared to that for GaAs-based comparable-power-level amplifiers. The developed GaN-FET amplifier with 24-mm gate periphery delivers a 61W output power with 10.2dB linear gain and 42% power-added efficiency under CW operating conditions. To the best of our knowledge, this is the highest CW output power achieved from a single-chip FET power amplifier at C-band.
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ABSTRACT: A recessed-gate AlGaN-GaN field-modulating plate (FP) field-effect transistor (FET) was successfully fabricated on an SiC substrate. By employing a recessed-gate structure on an FP FET, the transconductance was increased from 150 to 270 mS/mm, leading to an improvement in gain characteristics, and current collapse was minimized. At 2 GHz, a 48-mm-wide recessed FP FET exhibited a record output power of 230 W (4.8 W/mm) with 67% power-added efficiency and 9.5-dB linear gain with a drain bias of 53 V.IEEE Transactions on Microwave Theory and Techniques 12/2004; · 2.23 Impact Factor
Conference Proceeding: A 90W S-band high power amplifier for broadband wireless applications[show abstract] [hide abstract]
ABSTRACT: This paper describes a successfully developed 90W high power amplifier with the wide band range in S-band. The power amplifier consists of two 50W GaAs FET chips and small 180 degrees coupler transmission line circuit that was developed in an external matching network. The wide band performance was achieved by the 180 degrees coupler transmission line circuit and the multi-stage internal circuit. The power amplifier delivered an output power of 90W in the frequency range of 2.9 to 3.3 GHz. To our knowledge, this is the highest power and frequency range ever reported in S-band. A low 3rd-order intermodulation distortion (IM3) of less than -30 dBc was also achieved at a 10 dB back-off point from saturation power in the frequency range of 2.9 to 3.4 GHz. The developed power amplifier is suitable for the base station in broadband wireless access in the S-band.Microwave Symposium Digest, 2003 IEEE MTT-S International; 07/2003
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ABSTRACT: The performance results AlGaN-GaN Heterostructure Field Effect Transistors (HFETs) grown on SiC substrates are reported. The maximum transconductance of these devices was 142 mS/mm and the source-drain current was as high as 0.95 A/mm. The maximum dissipated DC power at room temperature was 0.6 MW/cm/sup 2/, which is more than three times higher than that in similar devices grown on sapphire. This high thermal breakdown threshold was achieved primarily due to the effective heat sink through the SiC substrate. These devices demonstrated stable performance at elevated temperatures up to 250/spl deg/C. The source-drain current saturation was observed up to 300/spl deg/C. The leakage current in the below threshold regime was temperature-activated with an activation energy of 0.38 eV.IEEE Electron Device Letters 11/1997; · 2.79 Impact Factor