Conference Proceeding
Electrothermal and phase-change dynamics in chalcogenide-based memories
DEI, Politecnico di Milano, Italy
01/2005;
DOI:10.1109/IEDM.2004.1419330
pp.911 - 914 In proceeding of: Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Source: IEEE Xplore
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Citations (0)
- Cited In (1)
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Article: Experimental Analysis of Partial-SET State Stability in Phase-Change Memories
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ABSTRACT: A key issue in nonvolatile storage is long-term data retention. This aspect is even more important in innovative storage technologies such as phase-change memory (PCM), which promises better performance and easier scalability with respect to traditional Flash memory and potential for multilevel storage. In this respect, we experimentally investigated the stability of intermediate states obtained by means of partial-SET programming. To this end, we analyzed the effects of the width and the amplitude of the programming pulses on the degradation of intermediate programmed resistance levels over time in PCM cells. Our study was carried out by considering the average behavior of an array of PCM cells, showing that data-retention properties degrade as the programming thermal stress increases.IEEE Transactions on Electron Devices 03/2011; · 2.32 Impact Factor
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Keywords
amorphous phase
chalcogenide phase-change mechanism
electrical-thermal conduction phase transition
experimental evidences
numerical model
phase distribution
phase-change memory
programmed cell
self-consistent electrothermal-phase transition model
self-consistently addresses