Critical analysis of results for a european GaN power amplifier after first iteration
ABSTRACT This paper presents the results of the development of 2-6 GHz broadband high-power amplifiers (HPA) within the 1st iteration of the European Korrigan project. The HPAs were fabricated using AlGaN/GaN high electronic mobility transistors (HEMT) and monolithic microwave integrated circuit (MMIC) technology. Two microstrip HPAs with output-stage active periphery of 4 mm and 8 mm are reported. The two-stage amplifiers were designed to be fully matched to 50 Omega input and output impedances. Based on a 0.5 mum gate-length microstrip HEMT technology, the MMICs were fabricated on a 70 mum thick SiC substrate. Under a 25 V DC bias condition the broadband amplifiers have exhibited about 18 dB small-signal gain. The 4mm-HPA delivers 10 W output power and 25% power added efficiency (PAE) in the 2-6 GHz frequency band, in continuous wave operation (CW) at Vds=25V. On the other hand, the 8mm-HPA delivers 16 W and 20% PAE in CW. In pulsed-mode, the output powers are 14 W and 25 W for the 4 mm and the 8 mm HPAs, respectively.
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ABSTRACT: Today the European GaN interest is slightly shifting away from academic research to development and industrialization of technology, devices and applications. The recent public funding was started to accelerate the transition from academica to industry on all levels like EC, national and by Space Agencies. In the paper the today's running projects and the upcoming trends will be described.01/2010;