Conference Paper

Critical analysis of results for a European GaN power amplifier after first iteration

Dept. de Senales, Sist. y Radiocomun., Univ. Politec. de Madrid, Madrid, Spain
Conference: Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European
Source: IEEE Xplore


This paper presents the results of the development of 2-6 GHz broadband high-power amplifiers (HPA) within the 1st iteration of the European Korrigan project. The HPAs were fabricated using AlGaN/GaN high electronic mobility transistors (HEMT) and monolithic microwave integrated circuit (MMIC) technology. Two microstrip HPAs with output-stage active periphery of 4 mm and 8 mm are reported. The two-stage amplifiers were designed to be fully matched to 50 Omega input and output impedances. Based on a 0.5 mum gate-length microstrip HEMT technology, the MMICs were fabricated on a 70 mum thick SiC substrate. Under a 25 V DC bias condition the broadband amplifiers have exhibited about 18 dB small-signal gain. The 4mm-HPA delivers 10 W output power and 25% power added efficiency (PAE) in the 2-6 GHz frequency band, in continuous wave operation (CW) at Vds=25V. On the other hand, the 8mm-HPA delivers 16 W and 20% PAE in CW. In pulsed-mode, the output powers are 14 W and 25 W for the 4 mm and the 8 mm HPAs, respectively.

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    • "TECHNOL First technologies were develo institutes within Europe. Germany, Great Britain played a great role universities and research institut published their contribution to th companies in Germany and France e.g.) and Great Britain (QinetiQ introduce their GaN technology or p The most offer two different gat around 6GHz [19] [20] "
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    ABSTRACT: Today the European GaN interest is slightly shifting away from academic research to development and industrialization of technology, devices and applications. The recent public funding was started to accelerate the transition from academica to industry on all levels like EC, national and by Space Agencies. In the paper the today's running projects and the upcoming trends will be described.
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    ABSTRACT: Compact S Band (2.2GHz to 2.8GHz and 2.8GHz to 3.2GHz) two stage power amplifiers are demonstrated using gallium nitride and gallium arsenide semiconductor technologies. The amplifier provides 83W to 105W of peak output power with peak power added efficiency of 42% to 51% over a 24% bandwidth. Small signal gain is 21dB to 24dB over this frequency band. The circuit design integrates matching networks and bias decoupling networks into a very compact 8mm by 8mm package. Additionally, the overall application board space is also a very compact 40mm by 25mm.
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    ABSTRACT: A C-Band MMIC high power amplifier (HPA) has been designed exploiting a 0.25 mu m HEMT GaN process on SiC substrate. The HPA is designed for future synthetic aperture radar (SAR) antenna applications. The HPA delivers 16 W output power with PAE over 38% at 6 dB gain compression within a 900 MHz bandwidth around 5.75 GHz. Up to 20 W output power and 40% PAE are obtained at higher gain compression. A comparison with another amplifier, differing only for the layout of the devices in the final stage, points out that the transistor thermal conditions represent the main limitation for this high power density technology.
    IEEE Microwave and Wireless Components Letters 09/2012; 22(9-9):471-473. DOI:10.1109/LMWC.2012.2212238 · 1.70 Impact Factor
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