Conference Proceeding

Transformer topologies for mmW integrated circuits

IMS Lab., Univ. of Bordeaux, Talence, France
11/2009; pp.181 - 184 In proceeding of: Microwave Conference, 2009. EuMC 2009. European
Source: IEEE Xplore

ABSTRACT Layout topologies for millimeter-wave transformers are presented. Transformers whose windings present different shapes and relative position are compared in terms of inductance, quality-factors, coupling coefficient and minimum insertion loss. We present measurement results of transformers implemented in a 65 nm CMOS technology. It is observed that octagonal transformers present better Q-factors than square transformers, and that transformers whose primary is rotated by 180 degrees present a partial resonance.

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    Article: Design and characterization of CMOS millimeter-wave transformers
    Bernardo Leite, Eric Kerhervé, Jean-Baptiste Bégueret, Didier Belot
    [show abstract] [hide abstract]
    ABSTRACT: A comprehensive analysis of the impact of geometric parameters on the design of millimeter-wave integrated transformers is presented. Transformers presenting the same stacked topology but different diameters and trace widths were fabricated in a 65 nm CMOS technology and their performance was compared in terms of inductance, quality-factors, coupling coefficient and minimum insertion loss. Results of electromagnetic simulation and measurement are exposed, showing an excellent agreement in a wide frequency band. It is observed that transformers with different diameters present similar performances but different resonance frequencies, whereas transformers with wider traces can present better minimum insertion loss results.
  • Source
    Conference Proceeding: Design and characterization of CMOS millimeter-wave transformers
    B. Leite, E. Kerherve, J.-B. Begueret, D. Belot
    [show abstract] [hide abstract]
    ABSTRACT: A comprehensive analysis of the impact of geometric parameters on the design of millimeter-wave integrated transformers is presented. Transformers presenting the same stacked topology but different diameters and trace widths were fabricated in a 65 nm CMOS technology and their performance was compared in terms of inductance, quality-factors, coupling coefficient and minimum insertion loss. Results of electromagnetic simulation and measurement are exposed, showing an excellent agreement in a wide frequency band. It is observed that transformers with different diameters present similar performances but different resonance frequencies, whereas transformers with wider traces can present better minimum insertion loss results.
    Microwave and Optoelectronics Conference (IMOC), 2009 SBMO/IEEE MTT-S International; 12/2009
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Keywords

180 degrees present
 
65 nm CMOS technology
 
inductance
 
minimum insertion loss
 
partial resonance
 
quality-factors
 
relative position
 
windings present different shapes