Conference Paper

Ge on Si p-i-n photodiodes for a bit rate of up to 25 Gbit/s

Inst. of Electr. & Opt. Commun. Eng. (INT), Univ. of Stuttgart, Stuttgart, Germany
Conference: Optical Communication, 2009. ECOC '09. 35th European Conference on
Source: IEEE Xplore

ABSTRACT Ge on Si p-i-n photodiodes are characterized on wafer in the time domain at a wavelength of 1550 nm. The photodiode output signal is sampled by a flip flop. At a bit rate of 25 Gbit/s and a Pseudo Random Bit Sequence (PRBS) length of 27-1, the Bit Error Ratio (BER) is smaller than 10-12.

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