Conference Paper

Memristor based High Linear Range Differential Pair

Cadence Design Syst., Noida, India
DOI: 10.1109/ICCCAS.2009.5250373 Conference: Communications, Circuits and Systems, 2009. ICCCAS 2009. International Conference on
Source: IEEE Xplore


The current paper demonstrates the design of a wide range differential amplifier using memristor. The paper provides a comparative analysis of traditional approaches with a memristor based approach to achieve a high linear range for an amplifier. The paper also discusses how the inherent nonlinearity of the memristor is helpful in increasing the linear range of an amplifier. A 90 nm operational amplifier design using GenericPDK provided by Cadence Design Systems is used to validate the design and Spectre simulation results are provided as a testimonial to our proposed solution.

30 Reads
  • Source
    • "It has been shown that memristor devices can be scaled down to 10 nm or below and memristor memories can achieve an integration density of 100 Gbits/cm , a few times higher than today's advanced flash memory technologies [23], [24]. More broadly, research has been done aiming at employing memristors in programmable logics [25]–[31], and analog circuit applications [32]–[38]. In the meantime, researchers have found that LC electronic networks with memristors can model adaptive behavior of unicellular organisms. "
    [Show abstract] [Hide abstract]
    ABSTRACT: Novel nonvolatile universal memory technology is essential for providing required storage for nanocomputing. As a potential contender for the next-generation memory, the recently found "the missing fourth circuit element," memristor, has drawn a great deal of research interests. In this paper, by starting from basic memristor device equations, we develop a comprehensive set of properties and design equations for memristor based memories. Our analyses are specifically targeting key electrical memristor device characteristics relevant to memory operations. Using our derived properties, we investigate the design of read and write circuits and analyze important data integrity and noise-tolerance is sues.
    Circuits and Systems I: Regular Papers, IEEE Transactions on 05/2011; 58(4-58):724 - 736. DOI:10.1109/TCSI.2010.2078710 · 2.40 Impact Factor
  • [Show abstract] [Hide abstract]
    ABSTRACT: An automatic gain control (AGC) topology with a variable gain amplifier utilizing a titanium dioxide (TiO2) memristor is described. A system analysis technique is developed based on the published physical charge-controlled memristor models and unique properties of this passive device. A linearized feedback loop amplitude model is used to design the AGC, and a design tradeoff analysis based on distortion performance is developed. The analysis results are verified with SPICE simulation including a TiO2 memristor SPICE model.
    Analog Integrated Circuits and Signal Processing 01/2010; 73(3). DOI:10.1109/NEWCAS.2010.5603719 · 0.47 Impact Factor
  • Source
    [Show abstract] [Hide abstract]
    ABSTRACT: In 2008, researchers at HP Labs published a paper in {\it Nature} reporting the realisation of a new basic circuit element that completes the missing link between charge and flux-linkage, which was postulated by Leon Chua in 1971. The HP memristor is based on a nanometer scale TiO$_2$ thin-film, containing a doped region and an undoped region. Further to proposed applications of memristors in artificial biological systems and nonvolatile RAM (NVRAM), they also enable reconfigurable nanoelectronics. Moreover, memristors provide new paradigms in application specific integrated circuits (ASICs) and field programmable gate arrays (FPGAs). A significant reduction in area with an unprecedented memory capacity and device density are the potential advantages of memristors for Integrated Circuits (ICs). This work reviews the memristor and provides mathematical and SPICE models for memristors. Insight into the memristor device is given via recalling the quasi-static expansion of Maxwell's equations. We also review Chua's arguments based on electromagnetic theory.
    Proceedings of The Royal Society A Mathematical Physical and Engineering Sciences 02/2010; DOI:10.1098/rspa.2009.0553 · 2.19 Impact Factor
Show more