Conference Paper

# Memristor based High Linear Range Differential Pair

DOI: 10.1109/ICCCAS.2009.5250373 Conference: Communications, Circuits and Systems, 2009. ICCCAS 2009. International Conference on
Source: IEEE Xplore

ABSTRACT The current paper demonstrates the design of a wide range differential amplifier using memristor. The paper provides a comparative analysis of traditional approaches with a memristor based approach to achieve a high linear range for an amplifier. The paper also discusses how the inherent nonlinearity of the memristor is helpful in increasing the linear range of an amplifier. A 90 nm operational amplifier design using GenericPDK provided by Cadence Design Systems is used to validate the design and Spectre simulation results are provided as a testimonial to our proposed solution.

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ABSTRACT: In 1971, Prof. Leon Chua proposed and described memristor which defines the relationship between flux and charge. Stanley Williams and his group realized a practical device that fulfills the memristor properties. In this paper, a memristor based high pass filter is presented. A comparative analysis between resistor and memristor based high pass filters is performed. The cut off frequency dependency of the high pass filter with memristor configuration is investigated. SPICE simulation results which are obtained using a memristor SPICE model with nonlinear dopant drift are included to verify theoretical analyses. The effect of change in the input frequency and initial condition of the length of doped region on the cut off frequency of the given high pass filter is investigated. The memory effect of memristor is represented by simulation results.
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##### Article: The Fourth Element: Characteristics, Modelling, and Electromagnetic Theory of the Memristor
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ABSTRACT: In 2008, researchers at HP Labs published a paper in {\it Nature} reporting the realisation of a new basic circuit element that completes the missing link between charge and flux-linkage, which was postulated by Leon Chua in 1971. The HP memristor is based on a nanometer scale TiO$_2$ thin-film, containing a doped region and an undoped region. Further to proposed applications of memristors in artificial biological systems and nonvolatile RAM (NVRAM), they also enable reconfigurable nanoelectronics. Moreover, memristors provide new paradigms in application specific integrated circuits (ASICs) and field programmable gate arrays (FPGAs). A significant reduction in area with an unprecedented memory capacity and device density are the potential advantages of memristors for Integrated Circuits (ICs). This work reviews the memristor and provides mathematical and SPICE models for memristors. Insight into the memristor device is given via recalling the quasi-static expansion of Maxwell's equations. We also review Chua's arguments based on electromagnetic theory.
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##### Article: FIRST-ORDER MEMRISTOR–CAPACITOR FILTER CIRCUITS EMPLOYING HP MEMRISTOR
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ABSTRACT: The memristor has drawn the worldwide attention since it has been discovered at HP laboratory on 1 May 2008. Since then many researchers are taking e®orts to ¯nd its applications in various areas. In this paper, we study the ¯lter characteristics of ¯rst-order low pass and high pass ¯lters employing memristor with a capacitor. The paper provides a comparative analysis between low pass and high pass ¯lter circuits that utilizing ordinary resistor or memristor with a capacitor. The theoretical analyzes are veri¯ed with SPICE simulation results using a memristor SPICE model with nonlinear dopant drift and MATLAB environment. The e®ect of change of the input frequency and initial resistance value of memristor on the cut-o® frequencies of the presented low pass and high pass ¯lters are investigated. The memory e®ect of memristor is represented by simulation results.
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