Selenium Segregation for Lowering the Contact Resistance in Ultrathin-Body MOSFETs With Fully Metallized Source/Drain
ABSTRACT We report the first integration of selenium (Se) segregation contact technology in ultrathin-body (UTB) n-MOSFET featuring Ni fully silicided source and drain. During the Ni silicidation process, the implanted Se segregated at the NiSi-n-Si interface, leading to significant reduction of Schottky barrier height and contact resistance. The UTB n-MOSFETs integrated with Se segregation (SeS) contact technology show significant external series resistance reduction and drive current performance enhancement. Drain-induced barrier lowering and gate leakage current density are not adversely affected by the SeS process.
Conference Proceeding: Optimization of series resistance in sub-0.2 μm SOI MOSFETs[show abstract] [hide abstract]
ABSTRACT: The optimization of device series resistance in ultra-thin film SOI devices is studied through 2-D simulations and process experiments. To achieve low series resistance, very thin silicides that do not fully consume the SOI film are needed. A novel cobalt salicidation technology using titanium/cobalt laminates is used to demonstrate sub-0.2 μm, thin-film SOI devices with excellent performance and very low device series resistanceElectron Devices Meeting, 1993. IEDM '93. Technical Digest., International; 01/1994
Conference Proceeding: Ultra-thin body SOI MOSFET for deep-sub-tenth micron era[show abstract] [hide abstract]
ABSTRACT: A 40nm-gate-length ultra-thin body (UTB) nMOSFET is demonstrated. A self-aligned thin body SOI device has previously been proposed for suppressing the short channel effect. UTB structure can eliminate the punchthrough path between source and drain and provide a more evolutionary alternative to the double-gate MOSFET for deep-sub-tenth micron technology. The advantage of using UTB is illustrated through device simulation (with the aid of Silvaco ATLAS) using simple doping profiles for the body and S/D (simple Gaussian)Electron Devices Meeting, 1999. IEDM Technical Digest. International; 02/1999
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ABSTRACT: Nanoscale Schottky barrier MOSFETs (SBFETs) are explored by solving the two-dimensional Poisson equation self-consistently with a quantum transport equation. The results show that for SBFETs; with positive, effective metal-semiconductor barrier heights, the on-current is limited by tunneling through a barrier at the source. If, however, a negative metal-semiconductor barrier height could be achieved, on-current of SBFETs would approach that of a ballistic MOSFET. The reason is that the gate voltage would then modulate a thermionic barrier rather than a tunneling barrier, a process similar to ballistic MOSFETs and one that delivers more current.IEEE Transactions on Electron Devices 12/2002; · 2.06 Impact Factor