Conference Proceeding

Storage coding for wear leveling in flash memories

California Inst. of Technol., Pasadena, CA, USA
08/2009; DOI:10.1109/ISIT.2009.5205977 pp.1229 - 1233 In proceeding of: Information Theory, 2009. ISIT 2009. IEEE International Symposium on
Source: IEEE Xplore

ABSTRACT NAND flash memories are currently the most widely used flash memories. In a NAND flash memory, although a cell block consists of many pages, to rewrite one page, the whole block needs to be erased and reprogrammed. Block erasures determine the longevity and efficiency of flash memories. So when data is frequently reorganized, which can be characterized as a data movement process, how to minimize block erasures becomes an important challenge. In this paper, we show that coding can significantly reduce block erasures for data movement, and present several optimal or nearly optimal algorithms. While the sorting-based non-coding schemes require O(n log n) erasures to move data among n blocks, coding-based schemes use only O(n) erasures and also optimize the utilization of storage space.

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Keywords

Block erasures
 
cell block
 
coding
 
data movement
 
data movement process
 
longevity
 
minimize block erasures
 
move data
 
n blocks
 
NAND
 
O(n log
 
optimal
 
optimal algorithms
 
optimize
 
sorting-based non-coding schemes
 
storage space
 
utilization
 
whole block