Conference Paper

Total ionization dose effects and single-event effects studies of a 0.25 µm Silicon-On-Sapphire CMOS technology

Dept. of Phys., Southern Methodist Univ., Dallas, TX, USA
DOI: 10.1109/RADECS.2007.5205470 Conference: Radiation and Its Effects on Components and Systems, 2007. RADECS 2007. 9th European Conference on
Source: IEEE Xplore


The total ionization dose effects and the single event effects in a 0.25 mum Silicon-On-Sapphire CMOS process are studied with a total dose of 100 krad(Si) and a fluence of 1.8times1012 proton/cm2. The results indicate that this process is radiation tolerant.

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