Altitude and underground real-time ser characterization of CMOS 65 nm SRAM

CNRS, Aix-Marseille Univ., Marseille, France
IEEE Transactions on Nuclear Science (Impact Factor: 1.28). 09/2009; 56(4):2258 - 2266. DOI: 10.1109/TNS.2009.2012426
Source: IEEE Xplore


We report real-time SER characterization of CMOS 65 nm SRAM memories in both altitude and underground environments. Neutron and alpha-particle SERs are compared with data obtained from accelerated tests and values previously measured for CMOS 130 nm technology.

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Available from: Jean-Luc Autran,
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    • "HE contribution to Single-Event Upsets (SEU) due to alpha-particles in the packaging materials can be inferred experimentally by performing SEU tests underground where the flux of terrestrial neutrons is very low. Autran et al. have shown experimentally that although the SEU rate from alpha particles has decreased with scaling, their share of the total SEU rate is larger than that from terrestrial neutrons [1]. Recently, Wrobel, et al. have shown these same trends by Monte Carlo modeling [2]. "
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    ABSTRACT: The emitted alpha particle energy distribution from solder bumps can show substantial surface emission which has a large impact on the modeled SEU rate. State-of-the art alpha-particle detectors are required to measure the low emissivity and energy distribution.
    IEEE Transactions on Nuclear Science 01/2011; 57(6-57):3251 - 3256. DOI:10.1109/TNS.2010.2085015 · 1.28 Impact Factor
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    • "On the other hand, alpha particles directly generate charges by losing their energy and ionizing atoms of the medium in which they travel, resulting in charge generation, which may then be collected by sensitive nodes [5]. A recent study [6] showed the contribution to the Soft Error Rate (SER) by alpha particles at ground level is twice as great as that of neutrons for a 65 nm technology, even with high purity package materials with an alpha emission rate of . This shows the importance of alpha particles to soft errors compared to atmospheric neutrons. "
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    ABSTRACT: At ground level, alpha particles are a major source of soft errors. They may result from radioactive isotopes found in electronic device materials. In this paper, the materials' contributions to alpha particle-induced Soft Error Rate (SER) and MCU are evaluated for a 65 nm CMOS technology. The trend of SER on 45 and 32 nm is also reported in this paper. These evaluations are performed by Monte Carlo simulations, taking into account the radioactive impurity contamination levels in the device.
    IEEE Transactions on Nuclear Science 01/2011; 57(6-57):3121 - 3126. DOI:10.1109/TNS.2010.2085446 · 1.28 Impact Factor
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    • ". In complement to TCAD work, numerous experimental studies were conducted these four last years to characterize the different test chips from an accelerated-test point-of-view with neutrons at the Los Alamos Neutron Science Center (LANSCE), as well as with an intense Am 241 alpha source at STMicroelectronics [14] [15] "
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    ABSTRACT: This review covers our recent (2005–2010) experiments and modeling-simulation work dedicated to the evaluation of natural radiation-induced soft errors in advanced static memory (SRAM) technologies. The impact on the chip soft-error rate (SER) of both terrestrial neutrons induced by cosmic rays and alpha-particle emitters, generated from traces of radioactive contaminants in CMOS process or packaging materials, has been experimentally investigated by life (i.e. real-time) testing performed at ground level on the Altitude Single-event Effect Test European Platform (ASTEP) and underground at the underground laboratory of modane (LSM). The paper describes these two test platforms and surveys the characterization results obtained for two SRAM technology nodes (130 nm and 65 nm). Experimental results concerning the characterization of the natural radiation environment are also reported.
    Microelectronics Reliability 09/2010; 50(9-11-50):1822-1831. DOI:10.1016/j.microrel.2010.07.033 · 1.43 Impact Factor
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