Altitude and Underground Real-Time SER Characterization of CMOS 65 nm SRAM

CNRS, Aix-Marseille Univ., Marseille, France
IEEE Transactions on Nuclear Science (Impact Factor: 1.46). 09/2009; DOI: 10.1109/TNS.2009.2012426
Source: IEEE Xplore

ABSTRACT We report real-time SER characterization of CMOS 65 nm SRAM memories in both altitude and underground environments. Neutron and alpha-particle SERs are compared with data obtained from accelerated tests and values previously measured for CMOS 130 nm technology.

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