Altitude and Underground Real-Time SER Characterization of CMOS 65 nm SRAM

CNRS, Aix-Marseille Univ., Marseille, France
IEEE Transactions on Nuclear Science (Impact Factor: 1.22). 09/2009; DOI:10.1109/TNS.2009.2012426
Source: IEEE Xplore

ABSTRACT We report real-time SER characterization of CMOS 65 nm SRAM memories in both altitude and underground environments. Neutron and alpha-particle SERs are compared with data obtained from accelerated tests and values previously measured for CMOS 130 nm technology.

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    ABSTRACT: At ground level, alpha particles are a major source of soft errors. They may result from radioactive isotopes found in electronic device materials. In this paper, the materials' contributions to alpha particle-induced Soft Error Rate (SER) and MCU are evaluated for a 65 nm CMOS technology. The trend of SER on 45 and 32 nm is also reported in this paper. These evaluations are performed by Monte Carlo simulations, taking into account the radioactive impurity contamination levels in the device.
    IEEE Transactions on Nuclear Science 01/2011; · 1.22 Impact Factor
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    ABSTRACT: <sup>238</sup>U and <sup>232</sup>Th and their relative daughters are impurity sources responsible for soft errors induced by alpha particles. In this paper, the contribution of each decay chain to the alpha emission rate is evaluated by assuming that secular equilibrium is reached. We show that for the same concentration of uranium and thorium in secular equilibrium, uranium decay chain has an alpha emission rate (AER) two times higher than the thorium decay chain. Furthermore, the contribution of these two decay chains to the Soft Error Rate (SER) and Multiple Cell Upset (MCU) is calculated for a 90 nm and a 65 nm CMOS technology by Monte Carlo simulations by considering a concentration of thorium 1.33 higher than uranium in secular equilibrium condition, which is representative to measurements found in literature. We show in these conditions that uranium has a contribution to the SER and MCU higher than that of thorium.
    IEEE Transactions on Nuclear Science 07/2011; · 1.22 Impact Factor
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    ABSTRACT: We report the modeling and simulation of the soft-error rate (SER) in CMOS 130 nm SRAM induced by alpha-particle emission in silicon due to uranium contamination at ppb concentration levels. Monte-Carlo simulation results have been confronted to experimental data obtained from long-duration (>;20 000 h) real-time measurements performed at the under-ground laboratory of Modane (LSM) and from experimental counting characterization using an ultra low background alpha-particle gas proportional counter. The calibration of simulations with the measured SER allowed us to determine a <sup>238</sup>U contamination level of 0.37 ppb (considered at secular equilibrium) in very good agreement with both corresponding alpha-particle emissivity levels measured and simulated at wafer-level in the range 1.1 to 2.3 × 10<sup>-3</sup> alpha/cm<sup>2</sup>/h.
    IEEE Transactions on Nuclear Science 07/2011; · 1.22 Impact Factor

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