Conference Proceeding
A novel LV LP CMOS internal topology of CCII+ and its application in current-mode integrated circuits
Electr. & Inf. Eng. Dept., Univ. of L'Aquila, L'Aquila, Italy
08/2009;
DOI:10.1109/RME.2009.5201310
In proceeding of: Research in Microelectronics and Electronics, 2009. PRIME 2009. Ph.D.
Source: IEEE Xplore
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Citations (0)
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Article: WO3 Hydrogen resistive gas sensor and its wide-range current-mode electronic read-out circuit
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ABSTRACT: Tungsten oxide (WO3) thin films have been prepared via Sol-Gel route by spinning (WCl6 in ethanol, 0.2M) on Pt interdigitated Si/Si3N4 substrates and annealed at 300°C for 12, 24, 96 and 200 hours respectively. Films morphology and crystalline phase have been characterized through SEM, AFM and glancing angle XRD. The increasing of the annealing time shows a positive effect on the degree of crystallization but with no substantial influence on the crystallite size, surface area and mean roughness of the films. Electrical tests have been carried out utilizing a current-mode dedicated read-out circuit to perform gas-sensing measurements of the polycrystalline WO3 films to H2 gas (0–250ppm) in dry air and operating temperatures ranging from 25°C to 250°C. Electrical tests have confirmed a n-type response of the films. Although improved sensitivity (S=RA/RSENS) has been achieved when decreasing the annealing time, best performances in terms of reproducibility and long term stability of the response have been obtained by annealing the film for 200 hours at 300°C temperature.IEEE Sensors Journal 04/2013; Early Access Articles. · 1.52 Impact Factor
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Keywords
CCII+
degenerated nMOS common
developed CCII+
frequency domains
general purpose portable applications
impedance simulators
input stage
internal CCII+ architecture
low-power positive second-generation current conveyor
novel internal architecture
parasitic components
proposed internal circuit topology
quasi-ideal CCII+
signal processing circuits
standard CMOS technology
well-known applications
X node impedance