Conference Paper

High velocity Si-nanodot : A candidate for SRAM applications at 16nm node and below

STMicroelectronics, Crolles, France
Conference: VLSI Technology, 2009 Symposium on
Source: IEEE Xplore

ABSTRACT We report a new nanodot MOSFET, based on the use of Bulk wafer and Silicon-On-Nothing technology, requiring neither CMP nor extra photo-lithographic step. SRAM-application oriented nanodot devices were fabricated using this new process. Record performance among the nanometric gate-all-around MOSFET state-of-the-art is obtained thanks to a high quality transport.

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