Carbon incorporation during growth of GaAs by TEGa‐AsH3 base low‐pressure metalorganic chemical vapor deposition

Institute of Electronics, National Chiao‐Tung University, Hsin‐Chu, 300 Taiwan, Republic of China
Journal of Applied Physics (Impact Factor: 2.18). 07/1993; 73(11):7851 - 7856. DOI: 10.1063/1.353935
Source: IEEE Xplore


Heavily carbon‐doped GaAs (1×1018∼1×1020 cm-3) grown by low‐pressure metalorganic chemical vapor deposition using triethylgallium and arsine as sources and liquid carbon‐tetrachloride (CCl 4 ) as dopant has been investigated. The carrier concentration was verified at various growth temperatures, V/III ratios, and CCl 4 flow rates. Dopant concentration first increased from 550 °C and reached a maximum at 570 °C growth temperature (T g ) and then decreased monotonously. Carbon incorporation was strongly enhanced when the V/III ratio was less than 30 at T g =590 °C or less than 40 at T g =630 °C. Hole concentration increased and then decreased as CCl 4 flow rate increased. Growth rate of layers decreased as growth temperature and flow rate of CCl 4 increased. The doping efficiency of epitaxial layers grown on the (100) substrate was higher than that on the 2° off toward ≪110≳ misoriented substrate. Carbon‐doped GaAs films had higher Hall mobility than zinc‐doped GaAs films at high doping levels due to less self‐compensation. The highest dopant concentration in this system was 2.3×1020 cm-3 at T g =580 °C and V/III=10.

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