Article

Antiferromagnetic bipolar semiconductor LaMnPO with ZrCuSiAs-type structure

Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8530, Japan
Journal of Applied Physics (impact factor: 2.17). 06/2009; DOI:10.1063/1.3124582 pp.093916 - 093916-8
Source: IEEE Xplore

ABSTRACT Electronic and magnetic properties of a layered compound LaMnPO are examined in relation to a newly discovered iso-structural superconductor LaFeAs(P)O. Neutron diffraction measurements, together with temperature dependent magnetic susceptibility, clarify that LaMnPO is an antiferromagnet at least up to 375 K. The spin moment of a Mn ion is determined to be 2.26 μB at room temperature, and the spin configuration is antiparallel in the Mn–P plane and parallel between the Mn–P planes, which is rather different from that of LaFeAsO. Optical absorption spectra, photoemission spectra, and temperature dependent electrical conductivity indicate that LaMnPO is a semiconductor. Furthermore, nominally undoped LaMnPO exhibits n -type conduction while the conduction type is changed by doping of Cu or Ca to the La sites, indicating that LaMnPO is a bipolar conductor. Density functional calculation using the GGA + U approximation supports the above conclusions; the electronic band structure has an open band gap and the antiferromagnetic spin configuration is more stable than the ferromagnetic one.

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Keywords

bipolar conductor
 
conduction type
 
Cu
 
Density functional calculation
 
discovered iso-structural superconductor LaFeAs(P)O
 
electronic band structure
 
GGA + U approximation
 
La sites
 
LaMnPO
 
layered compound LaMnPO
 
Mn–P plane
 
Mn–P planes
 
Neutron diffraction measurements
 
open band gap
 
Optical absorption spectra
 
room temperature
 
semiconductor
 
spin configuration
 
temperature dependent electrical conductivity
 
temperature dependent magnetic susceptibility
 

Hiroshi Yanagi