Article

Fabrication of MgO-based magnetic tunnel junctions with CoCrPt perpendicularly magnetized electrodes

Journal of Applied Physics (impact factor: 2.17). 05/2009; DOI:10.1063/1.3062816 pp.07C911 - 07C911-3
Source: IEEE Xplore

ABSTRACT The applicability of perpendicularly magnetized CoCrPt films to the MgO-based magnetic tunnel junctions (MTJs) was investigated. For this study, CoCrPt films deposited on the Ru buffer exhibited hcp(0002)-oriented growth by sputtering method using the low substrate temperature of 250 ° C , low saturation magnetization of around 360 emu / cm 3 , and high magnetic anisotropy field of 6 kOe, which is sufficient to retain the thermal stability of the magnetization direction. The MgO-based MTJs with a synthetic ferrimagnetlike structure were fabricated: CoFe was coupled magnetically with CoCrPt through the thin Ru layer. Transport properties with a magnetic field applied perpendicular to the film plane revealed a tunnel magnetoresistance ratio of about 6% at room temperature.

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Keywords

6 kOe
 
CoCrPt
 
CoCrPt films
 
low saturation magnetization
 
low substrate temperature
 
magnetization direction
 
MgO-based magnetic tunnel junctions
 
Ru buffer exhibited hcp(0002)-oriented growth
 
synthetic ferrimagnetlike structure
 
thin Ru layer
 
Transport properties
 
tunnel magnetoresistance ratio
 

Daisuke Watanabe