Fabrication of MgO-based magnetic tunnel junctions with CoCrPt perpendicularly magnetized electrodes
ABSTRACT The applicability of perpendicularly magnetized CoCrPt films to the MgO-based magnetic tunnel junctions (MTJs) was investigated. For this study, CoCrPt films deposited on the Ru buffer exhibited hcp(0002)-oriented growth by sputtering method using the low substrate temperature of 250 ° C , low saturation magnetization of around 360 emu / cm 3 , and high magnetic anisotropy field of 6 kOe, which is sufficient to retain the thermal stability of the magnetization direction. The MgO-based MTJs with a synthetic ferrimagnetlike structure were fabricated: CoFe was coupled magnetically with CoCrPt through the thin Ru layer. Transport properties with a magnetic field applied perpendicular to the film plane revealed a tunnel magnetoresistance ratio of about 6% at room temperature.