Article

Effect of patterning on the saturation magnetization in MgO based nanopillars

IMEC, Kapeldreef 75, 3001 Leuven, Belgium
Journal of Applied Physics (impact factor: 2.17). 05/2009; DOI:10.1063/1.3063080 pp.07B903 - 07B903-3
Source: IEEE Xplore

ABSTRACT We have studied the effect of nanopillar patterning on the saturation magnetization of the CoFeB free layer in MgO magnetic tunnel junctions. Before patterning, the free layer magnetization is measured by ferromagnetic resonance and is found to be close to the bulk value, with no detectable interface anisotropy. After patterning, the shape anisotropy and the frequency of the main spin wave mode indicate that the free layer magnetization is substantially reduced. Current dependent measurements indicate that this is not due to Joule heating. Size dependent measurements indicate that the magnetization reduction most likely arises from process damage during the etching step.

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Keywords

bulk value
 
CoFeB free layer
 
etching step
 
ferromagnetic resonance
 
free layer magnetization
 
Joule heating
 
magnetization reduction
 
MgO magnetic tunnel junctions
 
nanopillar patterning
 
process damage
 
saturation magnetization
 
shape anisotropy