Al0.83In0.17N lattice-matched to GaN used as an optical blocking layer in GaN-based edge emitting lasers

Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Quantum Electronics and Photonics, CH-1015 Lausanne, Switzerland
Applied Physics Letters (Impact Factor: 3.52). 06/2009; 94(19):193506 - 193506-3. DOI: 10.1063/1.3138136
Source: IEEE Xplore

ABSTRACT Nitride-based blue laser diode structures with either Al 0.83 In 0.17 N / Al 0.07 Ga 0.93 N or Al 0.87 In 0.13 N bottom claddings have been fabricated and compared to standard structures including solely Al 0.07 Ga 0.93 N bottom claddings. Lasing emission at 415 nm is achieved in gain-guided structures at room temperature under pulsed current injection. Devices including the Al 0.83 In 0.17 N / Al 0.07 Ga 0.93 N bottom cladding exhibit superior device performance. This is a consequence of a better optical mode confinement, as expected from modeling.

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